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Загальна кількість знайдених документів : 4
Представлено документи з 1 до 4
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Veleschuk V. P. Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures [Електронний ресурс] / V. P. Veleschuk, O. V. Lyashenko, Z. K. Vlasenko, M. P. Kysselyuk // Semiconductor physics, quantum electronics & optoelectronics. - 2010. - Vol. 13, № 1. - С. 79-83. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2010_13_1_17 It was shown that in the GaAsP/GaP and InGaN/GaN heterostructures during current passage redistribution of electroluminescence intensity on the structure surface takes place simultaneously with radiation of acoustic emission. Local (on surface area) fluctuations of electroluminescence intensity are observed together with general degradation of electro-physical parameters.
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Lyashenko O. V. Acoustic-emission method of control of defects-formation process in light-emitting structures [Електронний ресурс] / O. V. Lyashenko, A. I. Vlasenko, V. P. Veleschuk, M. P. Kisseluk // Semiconductor physics, quantum electronics & optoelectronics. - 2010. - Vol. 13, № 3. - С. 326-329. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2010_13_3_22
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Veleschuk V. P. Dependence of the CdTe melting threshold on the pulse duration and wavelength of laser radiation and the parameters of non-equilibrium charge carriers [Електронний ресурс] / V. P. Veleschuk, O. I. Vlasenko, Z. K. Vlasenko, V. A. Gnatyuk, S. N. Levytskyi // Ukrainian journal of physics. - 2017. - Vol. 62, № 2. - С. 159-165. - Режим доступу: http://nbuv.gov.ua/UJRN/Ukjourph_2017_62_2_12
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Veleschuk V. P. Dependence of the melting threshold of CdTe on the wavelength and pulse duration of laser radiation (Article retracted) [Електронний ресурс] / V. P. Veleschuk, O. I. Vlasenko, Z. K. Vlasenko, S. N. Levytskyi, D. V. Gnatyuk, A. V. Shefer, V. V. Borshch, O. B. Borshch // Semiconductor physics, quantum electronics & optoelectronics. - 2020. - Vol. 23, № 1. - С. 102-109. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2020_23_1_17 The melting threshold of CdTe Ith depending on the laser radiation wavelength (<$Elambda~=~300~-~800> nm) and pulse duration (<$Etau sub p ~=~7> ns...1 ms) have been calculated. Three fractions of the energy released during thermalization of excess carriers were considered: immediately after excitation (i), during non-radiative bulk (ii) and non-radiative surface (iii) recombination, which together determine the depth of heat penetration into the crystal and, therefore, the melting threshold of the CdTe surface region. It has been shown that in the range of laser pulse durations from 7 ns up to 1 <$Emu>s, the CdTe melting threshold mainly depends on the absorption coefficient <$Ealpha ( lambda )>. For pulse durations longer than 1 <$Emu>s, it started to depend also on the spectra of the reflectivity coefficient <$ER( lambda )>. It has been found that changes in the non-equilibrium excess carriers parameters - surface recombination velocity, lifetime and diffusion depth - can vary the CdTe melting threshold at least by 25 percent.
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